Fusion wafer bonding is the spontaneous adhesion of two substrates placed in direct contact. Also termed silicon direct wafer bonding, this method describes the room temperature bond between wafers with or without dielectric layers following a wet chemical or plasma activation step.

The XBC300 provides a cost effective 300mm platform offering plasma activation, wet chemistry application, alignment and wafer bonding.

Main Markets

• 3D IntegrationCMOS IS, 3D IC, SOI materials, SiGe & Ge Integration
• Compound SemiconductorEngineered Growth Substrates
• MEMSHermetic packaging, thick film SOI starting material for precise geometric control of membranes and cantilevers

• Temporary Wafer Bonding/Debonding
• Fusion Wafer Bonding
• Metal Diffusion Bonding
• Metal Eutectic Bonding
• Polymer Adhesive Bonding
• Glass Frit Wafer Bonding
• Anodic Wafer Bonding