Issue 02/2015

We are happy to share with you the latest issue of our customer magazine „SUSS report“.

Our customer magazine SUSS report provides you with an insider update on innovations and trends in equipment solutions for the semiconductor and related industries. You will find exciting technical publications as well as practice-oriented reports and personal notes by experts of the industry.

Have a look in our latest SUSS report issue as well as in our archive. The articles are also available as technical publications.

This annual edition is also available as hardcopy. Contact us for a free copy.


SUSS MicroTec’s Unique DSC300 Gen2 Platform – Combined Projection Lithography Performance with Advantages of Full-field Exposure

SUSS MicroTec DSC300 Gen2

The DSC300 Gen2 lithography system of SUSS MicroTec represents the latest generation of its projection scanner technology that is tailored to deliver high imaging performance at lowest cost of ownership. The system is designed to meet key requirements for advanced packaging applications both technically and economically. Its unique scanning exposure technology allows the use of large area photo masks that contain the full pattern image of the substrate which allows the production of non-repeatable features like edge exposure or test die structures. At the same time, a 1:1 projection lens provides high resolution patterning performance combined with a large depth of focus that is required to ensure high pattern fidelity when working with thick resists that are commonly used in advanced packaging or MEMS applications. The system is designed to automatically process 200 and/or 300mm wafers and is based on a less complex system design compared to traditional step and repeat projection lithography systems that directly translates into lower cost of ownership.

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Ruthenium Capping Layer Preservation for 100X Clean Through pH Driven Effects

In the absence of pellicle a EUVL reticle is expected to withstand up to 100x cleaning cycles. Surface damage upon wet and dry cleaning methods has been investigated and reported in recent years. Thermal stress, direct photochemical oxidation and underlying Silicon layer oxidation are reported as the most relevant root-causes for metal damage and peeling off. An investigation of final clean performance is here reported as a function of operating pH; the results show increased Ruthenium durability in moderately alkaline environment. The electrochemical rationale and the dependency of the reducing strength of the media with the pH will be presented as possible explanations for reduced damage.

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Ultra-Small Via-Technology of Thinfilm Polymers Using Advanced Scanning Laser Ablation

In this paper a new process technology will be discussed which uses a laser scanning ablation process. Laser ablation of polymers is in principle not a new technology. Low speed and high cost was the major barrier for further developments twenty years ago. But the combination of a scanning technology together with a quartz mask has opened this technology to overcome the limitation of the current photo-polymer process. The new technology is described in details and the results of structuring BCB down to less than 4 μm via diameter in a 4 μm thick film has been demonstrated. The via-side wall can be controlled by the fluence of the laser pulse.

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Evaluation of a Novel Exposure Concept to Enhance the Capabilities of Mask Aligner Lithography at Large Proximity Gaps

300 micron gap, FZP (3 rings), 2.0mW/cm2

The exemplary discussed FZP concept together with the MO Exposure Optics allows to generate useful resist structures with respect to resolution and resist profile at rather high proximity gaps. This concept allows to transfer well known projection lithography principles to cost-effective mask aligner lithography.

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Low-Temperature Hermetic Seal Bonding for Wafer-Level MEMS Packaging Using Sub-Micron Gold Particles with Stencil Printing Patterning

SEM image of sub-micron Au particles after heating at 200°C for 30 minutes in air

Wafer-level hermetic packaging with electrical interconnection is necessary for the integration of MEMS and LSI devices, and low-temperature metal bonding such as AuIn, AuSn, Cu-Cu and Au-Au has been increasingly attractive. Among those bonding methods, Au-Au thermo-compression bonding is a promising candidate, which has advantages of no concern of surface oxidation and simple process control.

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