Fusion Bond Preparation
Fusion Bond Preparation is executed prior the actual Fusion Wafer Bonding process in order to achieve a high quality and high yielding bond result. In wet chemical and/or plasma processes not only organic and particle contamination will be removed but also the bond surface becomes reactive and therefore stronger bonds can be achieved. Fusion Bond Preparation finally makes the Fusion Bond Process CMOS compatible, because post bond annealing can be reduced far below 450°C.
The SUSS MicroTec tool range for Fusion Bond Preparation includes manual as well as fully integrated modules:
NP12 is a standalone module for plasma activation at ambient pressure and ca. 35kHz operation, by full scale scanning of the wafer surface up to 300mm. PL12 is standalone Plasma Chamber at reduced atmopshere and 350kHz operation. MA/BA8Gen3 Aligner offers SELECT plasma tooling option. The unique feature of the system is the selective Plasma treatment capability. CL8/200 stand alone or cluster module and CL300 cluster module provide in-situ SC1 chemicals pretreatment capability