Device Characterization and Modeling
Accurate device characterization is based on statistical analysis of selected parameters that have been extracted from highly-accurate, on-wafer measurements. These parameters include DC parameters from I-V and C-V measurements, low-frequency noise measurements (1/f noise), load-pull and noise measurements and RF and microwave measurements of scattering (s-) parameters.
The benefits of measurement accuracy are clear: You get more efficient model extraction, which means faster model turnaround and less design iterations, faster time to market and ultimately a higher return on investment (ROI).
At SUSS, we are passionate about accuracy, and so we are dedicated to providing you with the most accurate measurements of your device under test (DUT). This means delivering a test environment that is “invisible” and protects the device from unwanted external influences such as electromagnetic and/or radio-frequency interference (EMI/RFI), while at the same time ensuring a controlled environment that allows you to carry out the exact test you need. We do this with our innovative ProbeShield® Technology. To see more about how we provide the most accurate measurements, click on one of the areas below.
Since the 1990's, SUSS has provided complete wafer-level measurement solutions for high-power semiconductor devices.
I-V/Pulsed I-V
C-V
1/f Noise
Noise
S-Parameter
