Manual Mask Aligner - MJB3

Features and Benefits

  • For research, laboratories, small series and pilot production
  • High-performance mask aligner
  • Wafer and substrate size up to 3”
  • Resolution far into the submicron region
Overview

Wafer size up to

3” Ø

Substrate size up to

3” x 3” (except MJB3 Standard: 2” x 2”)

Wafer / substrate thickness

0 – 4.5 mm

Mask size up to

4” x 4”

Exposure Modes

Vacuum contact (except MJB3 Standard)

Hard contact & soft contact

Exposure optics

Standard 280 – 450 nm (200W mercury lamp)

UV400 350 – 450 nm (350W mercury lamp)

UV300 280 – 350 nm (350W mercury lamp)

UV250 240 – 260 nm (500W Hg-Xe, PMMA resist)

UV200 210 – 230 nm (350W Cd-Xe, PMMA resist)

UV249 249 nm (KrF excimer laser)

UV193 193 nm (ArF excimer laser)

Uniformity

± 3% (2“ Ø ) (MJB3 Standard ± 5%)

± 5% (3“ Ø ) (MJB3 Standard ± 10%)

Maximum exposure area

3” x 3” (MJB3 Standard 3” Ø )

Microscopes

Microscope manipulator range of movement

50 x 50 mm

SUSS M200 SP

Splitfield Microscope

Objective distance, adjustable

24 – 91 mm

Optional

15 – 120 mm

Illumination

Fiberoptic, 20W or 85W

SUSS M230 SP

Splitfield Microscope

Objective distance, adjustable

30 – 91 mm

Illumination

Fiberoptic, 85W

SUSS M400

Normal Field Microscope

Illumination

Direct 15W

Photo Gallery

mjb3

Information Material

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