DSC300 Gen3 Projection Scanner

The High-Throughput Alternative to 1X Steppers

SUSS MicroTec introduces its next generation projection scanner – the DSC300 Gen3. This proprietary scanning lithography platform touts triple digit throughput with fine (< 2 μm) resolution capabilities at the lowest cost of ownership among 1X projection lithography systems.

The flexible DSC300 Gen3 Bridge-Tool for 200 mm and 300 mm wafers was re-engineered for higher performance and minimized overhead time. The DSC300 Gen3 Scanner delivers a 300 mm wafer throughput of up to 100 wph at 400 mJ/cm² and >80 wph at 1000 mJ/cm² dose. Its enhanced 1X Wynne-Dyson optics and four recipe-selectable numerical apertures (NA’s) enable the achievement of fine 2 μm features in thin resist, as well as >100 µm DoF in thick resist. The full-field imaging technology of the DSC300 Gen3 supports industry roadmaps for large die patterning and mixed die packaging for heterogeneous integration. In addition, fan-out wafer-level packaging applications can benefit from its optical die-shift compensation option. This latest die-shift and run-in/run-out mitigation feature corrects for up to ± 200 ppm (30 µm on a 300 mm diameter wafer).

With the projection scanner DSC300 Gen3, SUSS MicroTec offers a complementary technology to its mask aligner portfolio and a lowest cost of ownership alternative for traditional projection stepper lithography.

Highlights

High throughput of up to 100 wph
(400 mJ/cm² dose)

Lowest CoO among 1X projection lithography tools

Same 2 µm resolution as 1X UV stepper lithography tools

≤ 1.0 µm overlay (mean + 3 sigma)

Full-field large-die patterning without stitching

± 200 ppm optical die-shift compensation for FOWLP

The Alternative to 1X Steppers

Traditional 1X stepper lithography tools waste an excessive amount of time to ramp up stage speed, decelerate stage speed, then stop and settle. Multiply that wasted time for 50~70 shots and the resulting throughput is rather low.

Comparatively, the DSC300 Gen3 is exceptionally fast with its proprietary smooth, continuous serpentine scanning technique – no stops to waste time. The highly uniform beam with its well controlled projection area insures that the features all the way out at the edges of the wafer get the same uniform dose as the inner wafer. In addition, the beam overlaps itself by 50% on each scan pass to further average the dose across the entire wafer.

Prior to each scan exposure, the system measures the UV intensity and controls the stage velocity to provide the intended UV dose programmed into the recipe. The scanned light uniformity across the entire wafer is 97% (≤ 3% non-uniformity).

 

Features & Benefits

  • Uses easy to design full-field masks (non-inverted)
  • Best pattern and position replication
  • Superior technique for large-die and heterogeneous integration
  • No step-field size limitations – no stitching
  • Fast exposure times with good uniformity

 

High Throughput

The DSC300 Gen3 Projection Scanner elevates 1X projection lithography throughput to new heights – achieving triple digit levels for low doses (up to 100 wph for 300 mm wafers). An additional advantage to the DSC300 Gen3 is that the high throughput is stable for a specific UV dose no matter the pattern die size or wafer layout. Further, wafer edge exposure (WEE) and wafer edge protection (WEP) are handled by the full-field mask pattern and take no additional time.

  • Drastically higher throughput compared to 1X steppers
  • Throughput is not die-size, field-size or pattern dependent
 
Details: Projection Optics

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

Details: Focus-Level

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

Details: Handling

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

Details: Others

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

优异的对准精度

“轴上”对准模式通过投影镜头将掩模与晶圆进行对准(TTL – “通过镜头”),确保对准精度小于1微米。“离轴”对准模式可以非常精确地对准无较大透明区域的不透明掩模。对准中采用最先进的掩模识别方法。

Downloads
SUSS Product Portfolio 2243kb
Technical Publications
Service