The universal XBS300 platform is designed for (hybrid) fusion bonding of aligned 200 mm and 300 mm wafers. Its highly modular design offers maximum configuration flexibility at low cost-of-ownership for customers. Different configurations are available to meet the requirements in both R&D and high-volume manufacturing (HVM) environments. The new XBS300 hybrid bonding platform allows for both collective D2W (die-to-wafer) and W2W (wafer-to-wafer) hybrid bonding focusing on most demanding applications such as 3D stacked memory or 3D SOC (system-on-chip).
< 100 nm (3σ) overlay
High-performance integrated metrology
Reflective IR option
Compatible with silicon or glass carriers
Closed-loop feedback between integrated metrology and bond aligner
The XBS300 handles single wafers as well as bonded wafer pairs while keeping the highest cleanliness requirements. The platform can be configured for both HVM and R&D manufacturing environments. Integral part of the MHU is the 6-axis robot handler combining wafer handling flexibility on small volume with high precision placement. A cyclic scheduling algorithm with automated throughput optimization ensures consistent timing of all processes and continuous run capability.
The XBA bond aligner delivers consistent submicron alignment accuracy for transparent or non-transparent wafers by using our proprietary inter-substrate-alignment (ISA) technology. Built-in fixed reference, global calibration and overlay verification ensure optimum repeatability. Global calibration wafers are an integral part of the system and make automated calibration and overlay verification simple and quick.
To meet the highest alignment accuracy requirements the XBA bond aligner can optionally be upgraded to allow for consistent <100 nm (3 σ) overlay performance e.g. for ultra low pitch applications.
In order to align even embedded target structures the XBA can be configured with a high-quality reflective IR illumination.
The aqueous cleaning module offers many key features that are an integral part in achieving the highest cleanliness requirements, e.g. megasonic and diluted cleaning chemistry functionality (e.g. NH4OH (<2 %)). Additionally the system can be equipped with enhanced optional features such as an organic removal function (SC1 chemistry), backside rinse and N2 assisted spin-drying to further meet processing needs.
The dedicated plasma technology offers the highest process flexibility and repeatability for plasma-based high-efficiency wafer surface activation. Various process gases such as Ar, O2, N2 etc. can be used and are controlled via mass flow controllers (MFCs). Gate-valve loading allows for full CMOS conformity. Proper choice of the plasma chemistry furthermore allows for plasma cleaning of polymer residues.
In case bond force is required the XBS300 can be equipped with our industry-proven 300 mm low force bond chamber that can apply up to 15 kN of bond force. This bond chamber is the renowned in today’s worldwide temporary bonding industry.
The detach station be configured for both thermally assisted separation of temporarily bonded wafer pairs (for collective D2W) or for defect-free separation of W2W pre-bonded stacks for re-introduction of costly wafer material into the hybrid bonding process flow.
Integrated in-situ metrology functionality allows for fast process feedback. The metrology module is therefore key for increased process control and yield improvement. The module can be configured for both IR void inspection (true full field imagery at high resolution) and/or high accuracy IR overlay measurement featuring multi-site capability at high throughput.
In-line process control via closed-loop feedback of offset parameters to the bond aligner furthermore allows for consistent optimization of the overlay performance.
Fusion bonding refers to spontaneous adhesion of two planar substrates with a dielectric material (typically silicon oxide) as the bonding layer. The process usually involves a proper surface activation that renders the substrates to be largely hydrophilic. Subsequently the substrates are aligned, brought into contact and finally tempered at elevated temperature.
Hybrid bonding is an extension of fusion bonding, so that in addition to the dielectric material also metallic structures can be found in the bonding interface, which are bonded by diffusion during the annealing process. Successful bonding requires very careful control of the metal structure topography.