SB6/8e Gen2 提供半自動平台支援各種晶圓接合製程。SB6/8e Gen2 克服了不同型式和種類的載具，並可處理 200 mm 以下晶圓。本設備實為適用於不同應用技術與製程環境的靈活工具。適用範圍包含晶圓封裝應用與成像應用 (MEMS、LED、先進封裝、、2,5D 整合及 3D 整合應用)。 預將 SB6/8e Gen2 從研發轉為少量生產，最後再進入大規模量產，均可輕鬆簡單的轉換。
透過配置接合室可調整溫度、接合力與空氣壓力，也增加了可能的應用範圍。此外亦可配合製程環境調整製程。 配合使用 SUSS Bond Aligner-Suite 則 SB6/8e Gen2
A variety of materials are available for adhesive wafer bonding techniques utilizing polymers and adhesives, including epoxies, dry films, BCB, polyimides, and UV curable compounds.
Anodic wafer bonding involves encapsulating components on the wafer by means of ionic glass. In triple-stack bonding, three layers (i.e. glass-silicon-glass) are simultaneously bonded, enhancing both functionality and yield.
Eutectic wafer bonding takes advantage of the special properties of eutectic metals. Similar to soldering alloys, such metals melt already at low temperatures. This property allows planar surfaces to be achieved.
In order to control reflow of the eutectic material, eutectic bonding requires precise dosing of the bonding force and even temperature distribution.
Glass Frit Bonding
A glass frit bonding process involves screen-printing glass frits onto the bonding surfaces. This results in structures that are subsequently heated and fused when the two substrate surfaces are placed in contact. On cooling, a mechanically stable bond results.
To minimize the risks in thin wafer handling, the wafer is mounted on a carrier wafer prior to thinning. Bonding is only to facilitate further processing – the bond is designed to be dissolved once the wafer is processed.
Process steps required for temporary wafer bonding
SUSS MicroTec offers an open platform that is compatible with all common material systems used in temporary wafer bonding. In addition to the methods already used in production today, SUSS MicroTec is devoted to ongoing work towards qualifying new materials, in this way supporting the largest selection of adhesives currently available in the market.