XBS200 Wafer Bonder

Wafer Bonding Platform for High-Volume Production

The universal XBS200 platform allows for aligned wafer bonding of wafer sizes up to 200 mm. Its versatility and modular design offer maximum process flexibility in all permanent bonding tasks. A novel aligned wafer transfer method eliminates the complexity of traditional systems and offers consistent process results with excellent system availability. The XBS200 platform offers low cost of ownership for high-volume production of MEMS, LED and 3D devices.

Highlights

Submicron alignment accuracy

High process repeatability

Low cost of ownership

  • Bonding force: 60 or 100 kN, repeatability: < 2 %
  • Temperature: ≤ 550 °C, repeatability: < 1.5 %
  • Pressure: 5x10-5 mbar – 3 bar
  • Precise process recipe control for all bond parameters
  • Ramp function
  • Fast heating (40 K/min) and active cooling (40 K/min)
  • Wafer sizes: up to 200 mm

The XBS200 handles single wafers as well as aligned- and bonded wafer pairs by making use of a novel aligned wafer transfer method. It offers wafer cassette stations with integrated mapping and a camera-based optical pre-aligner with optional ID readers. An optional camera system allows to monitor and record the inside of the machine. A cyclic scheduling algorithm with automated throughput optimization ensures consistent timing of all processes and continuous run capability.

The new XBA bond aligner delivers consistent submicron alignment accuracy for transparent or non-transparent wafers by using our proprietary inter-substrate-alignment (ISA) technology. Built-in fixed reference, global calibration and overlay verification ensure optimum repeatability. Global calibration wafers are an integral part of the system and make automated calibration and overlay verification simple and quick.

The XB200 bond chamber is the process module version of the stand-alone XB8 bonder. It offers a wide parameter window and is therefore ideal for any thermo-compression bonding processes. Bond force options include a 60 kN and a 100 kN version and a temperature range of up to 550 °C is available. Reproducible process results from wafer to wafer achieve a consistently high product quality.

聚合物和黏著技術可以採用的材料相當多,包括環氧材料、乾性薄膜、BCB、聚醯亞胺及可紫外曝光化合物。

Available for:

Automated Bonder

Semi-Automated Bonder

陽極接合技術透過離子化玻璃將部件封裝在晶圓上。在玻璃/矽/玻璃的疊層接合中, 三層可以同時進行接合,可提高功能性和產量。

Available for:

Automated Bonder

Semi-Automated Bonder

晶圓的共晶接合利用了共晶金屬的特殊屬性。 像焊料一樣的合金即使在低溫下也能夠熔化。如此便能進行表面的平坦化處理。

共晶接合需要對接觸力和溫度的穩定性進行精確控制,以便控制共晶材料的回流。

Available for:

Automated Bonder

Semi-Automated Bonder

融合接合是兩種基板直接接觸後形成的自然相互黏著。拋光片在清洗後進行親水性加工,相互接觸並在高溫下降溫。 電漿活化等處理使得基板能夠在室溫下接合。

Available for:

Automated Bonder

Semi-Automated Bonder

Semi-Automated Bond Aligner

Semi-Automated Mask and Bond Aligner

此種方法通過網印將玻璃漿料塗在接合面上。熔化所產生的結構後,接觸至第二個基板。冷卻後即形成穩定的機械性連接。

Available for:

Automated Bonder

Semi-Automated Bonder

金屬擴散接合包括銅-銅、鋁-鋁、金-金和其他合金技術。另外,應用金屬擴散使兩個晶圓能夠在一個工作步驟中同時完成機械和電性兩種連接。這種技術被用在 3D 應用,如 3D 堆疊中。

Available for:

Automated Bonder

Semi-Automated Bonder

固液擴散鍵合(英文:SLID,solid-liquid inter-diffusion)的作用原理基於各種金屬的擴散及融合。鍵合後合金的融化溫度比鍵合溫度高出許多,大幅提高應用範圍。

Available for:

Automated Bonder

Semi-Automated Bonder

混合式鍵合的作用原理基於兩層金屬層受熱受壓結合並與融合鍵合整合。此過程中同時包含電子(金屬鍵合)與機械(融合鍵合)的結合。

Available for:

Automated Bonder

Semi-Automated Bonder

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