XBS200 Wafer Bonder

Wafer Bonding Platform for High-Volume Production

The universal XBS200 platform allows for aligned wafer bonding of wafer sizes up to 200 mm. Its versatility and modular design offer maximum process flexibility in all permanent bonding tasks. A novel aligned wafer transfer method eliminates the complexity of traditional systems and offers consistent process results with excellent system availability. The XBS200 platform offers low cost of ownership for high-volume production of MEMS, LED and 3D devices.

Highlights

Submicron alignment accuracy

High process repeatability

Low cost of ownership

  • Bonding force: 60 or 100 kN, repeatability: < 2 %
  • Temperature: ≤ 550 °C, repeatability: < 1.5 %
  • Pressure: 5x10-5 mbar – 3 bar
  • Precise process recipe control for all bond parameters
  • Ramp function
  • Fast heating (40 K/min) and active cooling (40 K/min)
  • Wafer sizes: up to 200 mm

The XBS200 handles single wafers as well as aligned- and bonded wafer pairs by making use of a novel aligned wafer transfer method. It offers wafer cassette stations with integrated mapping and a camera-based optical pre-aligner with optional ID readers. An optional camera system allows to monitor and record the inside of the machine. A cyclic scheduling algorithm with automated throughput optimization ensures consistent timing of all processes and continuous run capability.

The new XBA bond aligner delivers consistent submicron alignment accuracy for transparent or non-transparent wafers by using our proprietary inter-substrate-alignment (ISA) technology. Built-in fixed reference, global calibration and overlay verification ensure optimum repeatability. Global calibration wafers are an integral part of the system and make automated calibration and overlay verification simple and quick.

The XB200 bond chamber is the process module version of the stand-alone XB8 bonder. It offers a wide parameter window and is therefore ideal for any thermo-compression bonding processes. Bond force options include a 60 kN and a 100 kN version and a temperature range of up to 550 °C is available. Reproducible process results from wafer to wafer achieve a consistently high product quality.

这种使用聚合物和胶黏剂的键合方法可用于许多种材料,如环氧材料、干性薄膜、BCB、聚酰亚胺及可紫外固化的化合物。

Available for:

Automated Bonder

Semi-Automated Bonder

在阳极键合方法中部件被离子化玻璃封装在晶圆上。 通过三层叠层键合技术可同时连接三层(玻璃-硅-玻璃),这提高了它的性能和产率。

Available for:

Automated Bonder

Semi-Automated Bonder

晶圆的共晶键合利用了共晶金属的特殊属性。 像焊料一样的合金即使在低温下也能够熔化。 这能够形成平坦的表面。
共晶键合需要精确定量键合力以及均匀分布温度,以便能够控制共晶材料的“回流”焊接。

Available for:

Automated Bonder

Semi-Automated Bonder

熔融键合是两个平衬底的自然连接。 抛光片在清洗后进行亲水性加工,相互接触并在高温下退火。  等离子体预处理 使得衬底能够在室温下接合。

Available for:

Automated Bonder

Semi-Automated Bonder

Semi-Automated Bond Aligner

Semi-Automated Mask and Bond Aligner

在此种方法中,通过网印将玻璃浆料涂在键合面上。 熔化所产生的结构并接触第二个衬底。 冷却后会形成稳定的机械性连接。

Available for:

Automated Bonder

Semi-Automated Bonder

混合键合指的是两种金属层的热压键合与熔融键合混合进行的键合方法。该工艺过程中会同时产生一种电力(金属键合)和机械力熔融键合。

Available for:

Automated Bonder

Semi-Automated Bonder

金属扩散键合包括铜-铜、铝-铝、金-金和其它金属。 另外,应用金属扩散使两个晶圆能够在一个工作步骤中同时完成机械和电性两种连接。 这种技术被用在三维应用,如三维堆叠中。 

Available for:

Automated Bonder

Semi-Automated Bonder

固液互分散键合基于不同金属的扩散及聚合机理。键合之后,合金的熔点温度将大大高于键合温度,极大增加了应用范围。

Available for:

Automated Bonder

Semi-Automated Bonder

Downloads
SUSS Product Portfolio 990kb
Technical Publications
Service