MJB4 Mask Aligner

State-of-the Art Research Solution for Small Substrates and Pieces

Easy to use and compact in size the SUSS MicroTec MJB4 represents the perfect system for laboratories and small volume production. As an inexpensive photolithography solution the MJB4 has set industry standards specifically for processing of small substrates and pieces up to 100mm. Equipped with a reliable, high precision mask alignment and high resolution printing capability in the submicron range the MJB4 demonstrates a performance unsurpassed by any comparable machine. 

Highlights

High resolution printing down to 0.5µm

Fast and accurate alignment with SUSS Singlefield or Splitfield Microscope

High Resolution Optics optmized for thick resists

The Universal Optics Option for fast switching between different wavelengths

Upgradable with a retrofit kit for UV-Nanoimprint Lithography

SUSS MicroTec Mask Aligner MJB4

The MJB4 is widely used for MEMS and optoelectronics applications, such as LED production. It can be specifically configured for nonstandard substrates such as hybrids and high-frequency components for fragile III-V materials. In addition the MJB4 can be optionally enhanced with an upgrade kit for UV- Nanoimprint Lithography.

Details: Alignment

リソグラフィプロセスのうち、デバイスウエハのいずれか片方の面にあるパターンのみがアライメントの対象となる場合 (RDL、マイクロバンプなど) では、上面アライメントによってマスクのポジションマスクがウエハのポジションマスクに対してアライメントされます。SUSS MicroTecによって開発されたDirectAlign™では、基板の特徴に応じて、保存されているウエハのポジションデータまたは2枚のライブ画像 を用いてアライメントが行われます。

弊社のお客様が得るメリット

  • アライメント精度が高いマスクアライナ
  • コントラストが良くない場合でも明確でパワフルな画像認識機能

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

多くのパターン形成プロセスでは、複層のウエハスタックが使用されます。多くの場合、各層の間に埋め込まれているアライメントマスクは、赤外線照明を用いることで識別して、アライメントできます。
赤外光を使用して、このような埋め込まれたマスクに基づいたアライメントを行うこともできます。この場合、例えば不純物がドープされていないシリコ ン、様々な Ill-V半導体 (GaAsなど)、仮貼り付け/剥離用の接着剤といったような、赤外光に対して透明な材料を使用する必要があります。また、個別事例研究によって実現可能 性を確認する必要もあります。 
赤外線アライメントを実行できる可能性を最大限まで高めるため、SUSSマスクアライナには強力な赤外線光源と高性能カメラシステムが装備されています。

弊社のお客様が得るメリット

  • パワフルなIR光源と高性能カメラシステム

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

Details: Exposure

The lower the exposure gap from mask to wafer, the higher the resolution. In soft contact mode the wafer is brought into contact with the mask and is fixed onto the chuck with vacuum.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

In hard contact mode the wafer is brought in direct contact with the mask, while positive nitrogen pressure is used to press the substrate against the mask. In hard contact mode a resolution in the 1 micron range is possible.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

In this mode, a vacuum is drawn between mask and substrate during exposure. This results in a high resolution of < 0.8 µm.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

Details: Exposure Optics

The large gap optics (LGO) optics is optimized for thick resist processes with large exposure gaps and 3D lithography, offering a resolution down to 5μm. The high resolution optics (HR) is apt for contact and close proximity lithography with structures down to 3μm at 20μm exposure gap. For processes with high dose requirements on 150mm wafers the exceptionally high intensity of the W150 HR optics facilitates high throughput.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

The diffraction reducing exposure optics is designed to compensate diffraction effects in both contact and proximity lithography. Instead of using a plane wave as in other proximity lithography tools it provides an angular spectrum of planar light waves to reduce diffraction effects. The selection of a proper angular spectrum improves structure resolution in the resist.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

MO Exposure Optics® is a unique illumination optics specifically designed for SUSS mask aligners. It is based on micro-lens plates instead of macroscopic lens assemblies. A simple plug & play changeover allows for a quick and easy changeover between different angular settings including the functionality of both classical SUSS HR and LGO illumination optics.

The telecentric illumination which is provided by the MO Exposure Optics improves light uniformity and leads to a larger process window. In consequence, this causes yield enhancements. MO Exposure Optics also decouples the exposure light from the lamp source thus small misalignments of the lamp do not affect the light uniformity. A decoupled light source saves setup and maintenance time and guarantees uniform illumination conditions during the full life-time of the lamp.

Highlights

  • Excellent light uniformity over full exposure field
  • Stable light source
  • Customizable illumination by means of illumination filter plate exchange
  • "DUV-ready" process capabilities with fused silica micro optics
  • Special "down-sizing kits" for light compression to smaller wafer sizes

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

Details: Automation

SUSS mask aligners are equipped with a WEC head system that allows reaching the parallelism between substrate and mask with a micrometric precision.

Available for:

Automated Mask Aligners

Semi-Automated Mask Aligners

Manual Mask Aligners

Options: Exposure

リソグラフィプロセスのシミュレーション

リソグラフィプロセスをシミュレーションすることで、時間をかけて実験して試行錯誤することなくプロセスパラメータを最適に選択できます。このリソグラフィプロセス用多機能シミュレーションソフトウェア「Lab」は、SÜSS MicroTecがGenlSys社と共同販売しているもので、各プロセスをより効果的に管理するのに役立ちます。このソフトウェアには、デザインやプロセスの開発、検証、最適化のための、シミュレーションに必要なあらゆる機能が搭載されています。照明の形状、 マスクレイアウトの最適化からレジストプロセスまで、全プロセス行程を包括的にシミュレーションできます。最新式の3次元シミュレーション機能が搭載されていますので、一歩進んだ高度なモデル表示を行うこともできます。

MO Exposure OpticsとSÜSS製光学系のために特別に用意された光学系モデルを組み合わせることで、露光フィルタプレートのデザインをカスタマイズし、パターン形成精度を高めることができます。

ハイライト

  • マスクアライナによるリソグラフィプロセスの完全シミュレーション
  • 調整可能な照明パラメータ (コリメーション、分光組成)、SÜSS全光学系に対してカスタマイズ済み
  • 1、2、3次元の迅速かつ柔軟な可視化と定量的予測

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

Options: Nanoimprint Lithography

Imprint lithography represents a cost-effective and highly reliable means of transferring three-dimensional nano- or micro-scale patterns onto a wide variety of substrates.

For the imprint, a stamp is brought into contact with a photosensitive material on the substrate. The photoresist fills out the three-dimensional pattern of the stamp and then solidifies under UV light. Parameters such as pattern topography, structure resolution and aspect ratio have a considerable influence on the process quality. 

Thanks to its compatibility to well-established semiconductor processes, imprint lithography plays a key role in the development and production of DFB lasers, HB LEDs, wafer-level cameras and MEMS. 

SUSS MicroTec solutions for imprint lithography are based on manual mask aligner platforms and support a wide range of materials and substrate with sizes up to 200 mm. Furthermore, SUSS platforms provide the capability of aligning and levelling stamps to substrates, as required by many imprint applications. Imprint equipment can also be retrofitted to SUSS mask aligners which are already in the field. 

Depending on process requirements, SUSS MicroTec offers different imprint technologies on its mask aligners.

High-Resolution Nano-Imprinting

Using UV-NIL (UV nano-imprint lithography) SUSS MicroTec offers a classic imprint process to transfer patterns having a resolution down to 50 nm with superior fidelity. The transfer of the patterns is achieved using a hard quartz glass stamp, which is brought into contact with a UV-sensitive photoresist on the substrate. This setup allows very precise control of process parameters such as pressure, process gap and duration. The UV-NIL method allows the highest resolution of the three SUSS MicroTec imprint processes and is recommended for all R&D setups due to ease of use. 

Highlights 

  • Resolution in the two-digit nanometer range (< 50 nm)
  • Control of process parameters using recipe editor
  • Simple to use
  • High homogeneity of resist residual layer thickness 

Available for:

Semi-Automated Mask Aligner

Manual Mask Aligner

Technical Data
Mask and Wafer / Substrate
Wafer Size 1 up to 100 mm / 4" (round)
Max. Substrate Size 100 x 100 mm
Min. Pieces 5 x 5 mm
Wafer Thickness up to 4 mm
Mask Size  standard 2" x 2" up to 5" x 5" (SEMI)
Mask Thickness up to 4.8 mm / 190 mil
Exposure Modes
Contact: soft, hard, vacuum, soft vacuum
Vacuum contact adjustable to 200 mbar abs
Gap exposure, adjustable gap 10 – 50 µm
Flood exposure, split exposure
Lamp control modes: constant power, constant intensity
Exposure Optics
Wavelength Range UV400: 350 – 450 nm (g, h, i-line)
UV 300: 280 – 350 nm
UV 250: 240 – 260 nm
UV 250 / 300 / 400: 240 – 450 nm
Exposure Source CPC: Constant Power Controller for lamps
Hg 200 W and Hg 350 W
CIC1200: Constant Intensity Controller for lamps
Hg 200 W, Hg 350 W and HgXE 500 W (Deep UV)
Uniformity ≤ 3 %
Alignment Methods
Top Side Alignment (TSA) Accuracy < 0.5 µm (with SUSS recommended wafer targets)
Transmitted Infrared Alignment (IR) Accuracy < 5 µm (2 µm under special process conditions)
Alignment Gap 10 – 50 µm
Alignment Stage
MA Movement Range X: ± 5 mm
Y: ± 5 mm
Theta: ± 5°
Mechanical Resolution X, Y: 0.1 µm
Theta: 4 x 10-5°
Topside Microscope (TSA)
Movement Range X: ± 40 mm
Y: + 30 – 50 mm
Theta: ± 4°
Utilities
Vacuum < – 0.8 bar < 200 hPa abs
Compressed Air 5.5 bar (81 psi)
Nitrogen > 1.5 bar (22 psi)
Power Requirements
Power Voltage AC 230 V ± 10 %
Frequency 50 – 60 Hz
Physical Dimensions
Width x Depth 605 x 810 mm = 0.5 m2
Height 660 mm
Weight up to 130 kg (290 kg with antivibration table)
Operator Safety and Ergonomics CE-mark, others on request
Sound Pressure Level: < 70 db A)
UV radiation emissions (315 – 400 nm): < 0.2 mW/cm
Downloads
MJB4 Brochure 3002kb
SUSS Product Portfolio 2243kb
Imprint Lithography 2498kb
Videos
Publications

3D Topography Mask Aligner Lithography Simulation

3D Topography Mask Aligner Lithography Simulation

Reduction of Proximity Induced Corner Artifacts by Simulation Supported Process Optimization

Reduction of Proximity Induced Corner Artifacts by Simulation Supported Process Optimization

Technical Publications
Service