MJB4 Mask Aligner

4吋手動光罩對準曝光機

SUSS公司新發表的MJB4是高度受歡迎的手動光罩對準曝光機MJB3的次世代版本。其非常適合作為實驗室與小系列生產之理想的經濟型設備。而在其接觸式曝光模式中,此設備能夠達到的0.5µm解析度,這在任何其它類似的機台上是非常卓越的效能。

亮点

具有轉印特性解析度能力達0.5µm的高解析度手動光罩對準曝光機

可處理最大至4吋(晶圓),4吋x4吋(基板)的晶圓與基板

適用於小片、III-V族材料、厚基板、混合式與HF元件等特殊基板的真空吸盤

高精準度的X、Y、Q對準平台座,以及顯微鏡控制器

高強度的光學設定,可適用於高達90mW/cm²的不同UV曝光波長

SUSS MicroTec Mask Aligner MJB4

此機台已被廣泛運用在MEMS與光電子應用上。特別是它可以架構成能夠處理非標準型的基板,例如混合型、高頻元件或脆弱的III-V族材料,如GaAs或InP。此設備亦能與SUSS的單視域或分視域顯微鏡搭配,以獲得快速且高精準度的對準效能。

在單使用在對準器件晶圓同一面的結構  (例如:重佈線製程、微凸塊或相類似的結構)的壓印技術方面,光罩的位置標記透過頂部調整對準晶圓上的位置標記。依基板的特性,使用晶圓上儲存的位置資料或透過 SUSS MicroTec DirectAlign™ 產出的兩個現場圖片來做調整。

特色與優點

  • 光罩對準器中精準度之最
  • 清晰和強大的圖像識別,即使對比不明顯

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

許多結構處理均以多層晶圓堆疊處理。透過紅外線曝光使得通常嵌在堆疊層之間調整記號得以識別及對準。

透過紅外線亦可對準嵌在其中的位置標記。這需要使用紅外線可穿透之材料,如:未參雜的矽,許多 Ill-V-半導體 (例如:GaAs)、暫時性接合和剝離方法使用之粘合劑。並應透過個別的檢驗檢查其可穿透性。

SUSS 提供多種具有強力紅外線光源與內建高效能相機系統的紅外線標記對準機。

特色與優點

  • 強力的紅外線光源與高效能相機系統

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

The lower the exposure gap from mask to wafer, the higher the resolution. In soft contact mode the wafer is brought into contact with the mask and is fixed onto the chuck with vacuum.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

In hard contact mode the wafer is brought in direct contact with the mask, while positive nitrogen pressure is used to press the substrate against the mask. In hard contact mode a resolution in the 1 micron range is possible.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

In this mode, a vacuum is drawn between mask and substrate during exposure. This results in a high resolution of < 0.8 µm.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

The large gap optics (LGO) optics is optimized for thick resist processes with large exposure gaps and 3D lithography, offering a resolution down to 5μm. The high resolution optics (HR) is apt for contact and close proximity lithography with structures down to 3μm at 20μm exposure gap. For processes with high dose requirements on 150mm wafers the exceptionally high intensity of the W150 HR optics facilitates high throughput.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

The diffraction reducing exposure optics is designed to compensate diffraction effects in both contact and proximity lithography. Instead of using a plane wave as in other proximity lithography tools it provides an angular spectrum of planar light waves to reduce diffraction effects. The selection of a proper angular spectrum improves structure resolution in the resist.

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

MO Exposure Optics® is a unique illumination optics specifically designed for SUSS mask aligners. It is based on micro-lens plates instead of macroscopic lens assemblies. A simple plug & play changeover allows for a quick and easy changeover between different angular settings including the functionality of both classical SUSS HR and LGO illumination optics.

The telecentric illumination which is provided by the MO Exposure Optics improves light uniformity and leads to a larger process window. In consequence, this causes yield enhancements. MO Exposure Optics also decouples the exposure light from the lamp source thus small misalignments of the lamp do not affect the light uniformity. A decoupled light source saves setup and maintenance time and guarantees uniform illumination conditions during the full life-time of the lamp.

Highlights

  • Excellent light uniformity over full exposure field
  • Stable light source
  • Customizable illumination by means of illumination filter plate exchange
  • "DUV-ready" process capabilities with fused silica micro optics
  • Special "down-sizing kits" for light compression to smaller wafer sizes

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

詳情 : Automation

SUSS mask aligners are equipped with a WEC head system that allows reaching the parallelism between substrate and mask with a micrometric precision 

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

選配: 曝光

微影製程模擬

微影製程模擬無須使用嘗試錯誤法 (Trial-and-Error-Method) 即可找出最佳製程參數。由 SUSS MicroTec 與製造商 GenISys 共同合作針對微影製程"實驗室"所研發的多功能微影製程模擬軟體主要允許使用者能夠更確實地控制製程。該軟體提供設計及研發,以及校驗與最佳化所須的所有模擬功能。同時涵蓋從光線調整、光罩結構改良到光阻劑處理的所有製程步驟。此外,使用先進的 3D 模擬功能顯示模型。

MO Exposure Optics 輔以特別為 SUSS 光學鏡頭模型所設計的光學鏡片,可進行濾光基板設計的最佳化,並可因此提高圖像的精準度。

特色

  • 完整模擬光罩對準機的微影製程
  • 可調整式光線參數 (準直、光譜成分),針對所有 SÜSS 光學鏡頭所設計
  • 快速、靈活的呈現方式,並可以不同空間度量呈現 ( 1-、2- 和 3-D)

Available for:

Automated Mask Aligner

Semi-Automated Mask Aligner

Manual Mask Aligner

壓印光刻技術為一種具成本優勢且高度可靠的製程方法,可應用在各式各樣的基板上建立奈米至微米範疇的三度立體圖形結構。
當執行壓印光刻製程時,將模板壓印在事先塗佈好光阻劑(感光材料)的基板上使光阻劑能填入模版的三度立體結構,接著透過紫外線曝光將光阻劑固化成型,完成壓印光刻製作。在壓印光刻製程中, 諸如三度立體圖形結構分佈,圖形線寬解析及圖形結構深寬比等都是製程品質控制的重要因素。 

由於壓印光刻技術與傳統半導體產業的製程相容,因此在諸如DFB lasers、HB LEDs、晶圓級封裝相機模組及MEMS等元件產品開發及生產扮演關鍵的角色。
SUSS MicroTec 的壓印光刻技術解決方案是以手動式Mask Aligner曝光機產品,支援廣泛的感光材料種類應用,最大基板尺寸可支援到 200 mm 。並且, Mask Aligner曝光機產品具有”模板與基板圖形對位”與”模板與基板平行度校正”的功能支援壓印光刻應用的製程需求。

利用紫外線奈米壓印光刻技術(UV-NIL,UV nano imprint lithography),SÜSS MicroTec 提供卓越的壓印製程,能精確地壓印圖型結構在基板上, 圖形最大的解析度可達到線寬在 50 nm 的設計結構。結構的呈像須透過石英玻璃製的模板,該模板會與基板上已塗佈的UV感光光阻劑接觸並且壓印。透過曝光機機台設定,可以精準的控制壓印光刻製程所需的壓印力、基板與模板間隙及曝光成型時間。
SUSS MicroTec 旗下的三種壓印製程中, UV-NIL方法提供最高的圖形解析度,且由於其製程操作的便利性,固其非常能符合在製程研發階段的需求。

優勢

  • 圖形線寬解析度可達 < 50 nm
  • 透過製程配方編輯器控制製程參數
  • 操作簡易
  • 壓印後, 基板上殘餘光阻厚度控制具有極高的一致性

Available for:

Semi-Automated Mask Aligner

Manual Mask Aligner

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