Automated Platform for Wafer Sizes up to 300 mm
SUSS MicroTec 將其在微結構與提供高標準性能和品質六十年的專業經驗運用至晶圓接合系統領域。與研究機構和材料製造商的通力合作成就了尖端的智能方案。這些設備廣泛用於 2,5D 和 3D 整合、製造和 MEMS、LED 以及功率半導體的封裝，並同是廣泛應用於相關的研發。
Wafer bonding refers to attaching two or more substrates or wafers, of materials such as glass or silicon, to each other by means of various chemical and physical effects. Wafer bonding is mainly used in MEMS, where sensor components are encapsulated in the application. Other markets for this technology include advanced packaging, 3D integrationand CIS manufacturing. Temporary wafer bonding is a specialized technology within wafer bonding that is regarded as a key technology for 3D integration.
A variety of materials are available for adhesive wafer bonding techniques utilizing polymers and adhesives, including epoxies, dry films, BCB, polyimides, and UV curable compounds.
Anodic wafer bonding involves encapsulating components on the wafer by means of ionic glass. In triple-stack bonding, three layers (i.e. glass-silicon-glass) are simultaneously bonded, enhancing both functionality and yield.
Eutectic wafer bonding takes advantage of the special properties of eutectic metals. Similar to soldering alloys, such metals melt already at low temperatures. This property allows planar surfaces to be achieved.
In order to control reflow of the eutectic material, eutectic bonding requires precise dosing of the bonding force and even temperature distribution.
Fusion bonding refers to spontaneous adhesion of two planar substrates. The process involves rinsing the polished discs and rendering them largely hydrophilic, then placing them in contact and tempering them at high temperatures. Plasma pretreatment allows the substrates to be bonded at room temperature.
Glass Frit Bonding
A glass frit bonding process involves screen-printing glass frits onto the bonding surfaces. This results in structures that are subsequently heated and fused when the two substrate surfaces are placed in contact. On cooling, a mechanically stable bond results.
Various combinations of adhesive and release layers are available on the market that enable mechanical separation of the carrier wafer from the wafer before further processing. It is consequently essential to be able to vary parameters such as debonding speed and the debonding force applied in order to support the method applied in the particular case. The process needs to be controlled and monitored. During debonding, the thin wafer remains attached to dicing tape in order to facilitate further processing after being released from the carrier wafer.
The mechanical debonding processes supplied by SUSS MicroTec run at room temperature and are suitable for all common adhesives and techniques for temporary bonding. After debonding, the wafers require cleaning in order to remove any adhesive or release layer residues. Certain types of dicing tapes for mounting wafers have only limited resistance to cleaning media. Such tapes require protection during wafer cleaning.
Metal Diffusion Bonding
Metal diffusion bonding is based on Cu-Cu, Al-Al, Au-Au and other metallic bonds. In addition, the use of metal diffusion allows two wafers to be bonded both mechanically and electrically in a single step. The technique is required for bonding in 3D applications such as 3D stacking.
SLID bonding (solid-liquid inter-diffusion) is based on diffusion and the mixture of different metals. The melting temperature of the alloy after bonding is very much higher than the bonding temperature, which clearly widens the range of possible applications.