XB8 Wafer Bonder

XB8 晶圓接合機(Wafer Bonder)的設計適用多種鍵合工藝,並可用於加工晶圓尺寸在 200 mm 以下的襯底。所有的工藝參數皆可根據需求彈性調整,使得機組可完美地應用於研發上。在生產過程中 XB8 的自動化程度高且其結構設計經過廣泛考慮,可使製程具有高度的穩定性。因而 XB8 晶圓接合機最適合應用於微電機系統、先進封裝、三維集成及 LED 等領域。

Highlights

工藝開發期間不乏靈活變換的可能性

製程穩定 

產量高

 

重複精度高

XB8 晶圓接合機具備一間含自動化載入功能的閉合處理室。載入程序執行期間將處理室填充氮氣,力保維持其清潔度。高自動化程度能將機組操作人員對製程結果的影響降至最低。鍵合室本身的加熱器具有熱分離功能,如此即可精確地再現製程溫度,同時重複鍵合亦不失精度與鍵合力。

均質地分配溫度及鍵合力 

陶瓷加熱器具有熱分離功能可均勻地分配溫度,同時保障鍵合力在全溫度範圍內達到最佳的均質性。選配的多區加熱系統可進階地調控溫度的分佈。XB8 晶圓接合機的設計結構創新,能最理想地在晶圓上分配鍵合力及溫度,以取得高產量。 

將 XB8 配合 SUSS MicroTec 的 接合對準器 即可實現晶圓對準晶圓的高精度鍵合工藝。

XB8 提供各式專門的工具選項。

因應特殊製程條件的需求,XB8 提供各式專門的 工具選項

 

 

  • Bonding force: 60 or 100 kN, repeatability: < 2%
  • Temperature: ≤ 550 °C, repeatability: < 1.5%
  • Pressure: 5x10-5 mbar – 3 bar
  • Precise process recipe control for all bond parameters
  • Ramp function
  • Fast heating (40 K/min)( and active cooling (40 K/min) to reduce process cycle times
  • Wafer sizes: 4, 6, 8 inch
  • Dedicated tooling for pieces

Adhesive Bonding

A variety of materials are available for adhesive wafer bonding techniques utilizing polymers and adhesives, including epoxies, dry films, BCB, polyimides, and UV curable compounds.

Available for:

Automated Bonder

Semi-Automated Bonder

Anodic Bonding

Anodic wafer bonding involves encapsulating components on the wafer by means of ionic glass. In triple-stack bonding, three layers (i.e. glass-silicon-glass) are simultaneously bonded, enhancing both functionality and yield.

Available for:

Automated Bonder

Semi-Automated Bonder

Eutectic Bonding

Eutectic wafer bonding takes advantage of the special properties of eutectic metals. Similar to soldering alloys, such metals melt already at low temperatures. This property allows planar surfaces to be achieved.

In order to control reflow of the eutectic material, eutectic bonding requires precise dosing of the bonding force and even temperature distribution.

Available for:

Automated Bonder

Semi-Automated Bonder

Fusion Bonding

Fusion bonding refers to spontaneous adhesion of two planar substrates. The process involves rinsing the polished discs and rendering them largely hydrophilic, then placing them in contact and tempering them at high temperatures. Plasma pretreatment allows the substrates to be bonded at room temperature.

Available for:

Automated Bonder

Semi-Automated Bonder

Semi-Automated Bond Aligner

Semi-Automated Mask and Bond Aligner

 

Glass Frit Bonding

A glass frit bonding process involves screen-printing glass frits onto the bonding surfaces. This results in structures that are subsequently heated and fused when the two substrate surfaces are placed in contact. On cooling, a mechanically stable bond results.

Available for:

Automated Bonder

Semi-Automated Bonder

Hybrid Bonding

Hybrid bonding is based on a thermocompression bond of two metallic layers with an integrated fusion bond. In this process, an electric (metal bond) compound and a mechanical (fusion bond) joint form at the same time.

Available for:

Automated Bonder

Semi-Automated Bonder

Metal Diffusion Bonding

Metal diffusion bonding is based on Cu-Cu, Al-Al, Au-Au and other metallic bonds. In addition, the use of metal diffusion allows two wafers to be bonded both mechanically and electrically in a single step. The technique is required for bonding in 3D applications such as 3D stacking.

Available for:

Automated Bonder

Semi-Automated Bonder

Slid Bonding

SLID bonding (solid-liquid inter-diffusion) is based on diffusion and the mixture of different metals. The melting temperature of the alloy after bonding is very much higher than the bonding temperature, which clearly widens the range of possible applications.

Available for:

Automated Bonder

Semi-Automated Bonder

The bond head includes a center pin which allows to establish contact between both wafers at their center points. This helps to maintain excellent alignment even after thermal expansion of the bond partners. The center pin is used to initiate a fusion bond in the center of the wafer stack.

Available for:

Semi-Autometed Bonder

The bond head offers excellent temperature and bond force uniformity and maintains excellent post-bond alignment in combination with SUSS’ proprietary sequential spacer removal technology. This bond head and tooling design enable optimum yield due to minimal exclusion zones.

Available for:

Semi-Automated Bonder

The open fixture features a transport ring with minimum contact area for wafer support and maximized cut-out area for reduced thermal mass during heat up and cool down. This type of fixture allows direct contact between the wafers and the sandwich and pressure plates which results in optimum temperature uniformity across the wafers. In addition, this enables optimal heating and cooling rates and is therefore the best choice for high throughput applications.

Available for:

Semi-Automated Bonder

Featuring a transport ring with an integrated SiC tooling plate closed fixtures are designed for handling irregular substrate shapes as well sensitive material such as lithium tantalate. The closed fixture is ideal for fragile substrates like MEMS and optical devices as the wafers are fully supported and protected during handling.

Available for:

Semi-Automated Bonder

The multi-bond fixture is used in combination with a special loading and mechanical alignment system and supports multi-wafer bonding and multiple wafer sizes at the same time. Bonding multiple wafers in the same bond cycle allows to maximize the overall system throughput.

Available for:

Semi-Automated Bonder

Downloads
XB8 Datasheet 350kb
SUSS MicroTec Product Portfolio 1000kb
Publications

Wafer-Level Packaging Using High Force Bonding of AlGe

Wafer-Level Packaging Using High Force Bonding of AlGe

Low-Temperature Hermetic Seal Bonding for Wafer-Level MEMS Packaging Using Submicron Gold Particles with Stencil Printing Patterning

Low-Temperature Hermetic Seal Bonding for Wafer-Level MEMS Packaging Using Submicron Gold Particles with Stencil Printing Patterning

Videos
Technical Publications
Service