SUSS MicroTec專為化合物半導體製程所設計的光罩對準曝光機 MA100/150e Gen2，能處理高亮度 LED (HB-LED)、功率元件、RF-MEMS 等重要的化合物半導體製程。MA100/150e Gen2 具備高度精準的對準功能，可為易碎、翹曲、透明的晶圓，進行客製化基材處理，還可輔以高達 0.7µm 的高解析度光學系統，使 MA100/150e Gen2 可解決LED製程上目前的難題，協助您進一步縮減製程成本及提高生產效率，並克服 LED 製程上的各種微影挑戰。
專為 HB-LED、供電裝置、RF-MEM 等而設計的專用光罩對準曝光機解決方案
可同時處理三片晶圓能力，可提供每小時高達 145 片晶圓的生產率（包含自動對準及曝光）
SUSS 繞射式光學元件能以近接式曝光, 解決解析度方面的挑戰（在四吋晶圓上, 薄膜光阻的曝光間距為 20µm 時, 可小至 3µm L/S）
The 'Line Alignment' function for sapphire wafers aligns scribe lines precisely to the photo mask
MA100/150e Gen 2 可透過SUSS MicroTec 經生產驗證的光罩對準曝光機設計，為新的裝置設計提供卓越的製程擴充能力，並可加速上市時間，同時可提供領先於業界，每小時 145 片晶圓的高生產率，協助您縮短生產週期時間。
經過優化設計後的MA100/150e Gen2，可針對上至四英吋的小尺寸晶圓。該系統可穩定提供小至 ±0,7 µm (DirectAlign) 的對準精準度，而選配的背面對準系統 (Bottomside alignment, BSA) 則可提供小至 ±1.5 µm 的對準精準度。MA100/150e 的對準裝置是專為 LED 製程的特殊需求而量身設計，即便是透明和表面粗糙的晶圓，亦能提供卓越的對比度。
Where lithographic processes require the alignment of structures on only one side of the device wafer (e.g. RDL, microbumping and similar techniques), top-side alignment is used to align the fiducials on the mask with those of the wafer. Depending on substrate properties, this can be achieved either using stored position data for the wafer or through live image alignment, as in the DirectAligntm system invented at SUSS MicroTec.
Bottom-side Alignment (BSA)
Alignment of the structuring on the wafer back side with the structures on the front is required in processes involving applications such as MEMS, wafer-level packaging and 3D integration, where used for example to create vertical through silicon vias (TSVs) on interposers. Optical bottom side alignment is normally used for this type of alignment. An integrated camera system detects the mask structures and the structures on the wafer back side and aligns them with each other. The wafer position has to be determined and stored prior to loading, since the wafer afterwards conceals the mask target. This places specialized demands on the alignment system as a whole.
Features and Benefits
Enhancing Alignment Precision
When stringent demands are made of overlay accuracy, the auto-alignment functionality of the standard system can be considerably refined. DirectAlign®, the SUSS MicroTec enhanced functionality for structure detection software, uses live images instead of patterns from an image memory system. The technology is based on the industry standard PatMax and achieves outstanding results. Using DirectAlign® for top-side alignment on a SUSS mask aligner allows accuracy of 0.5 µm to be achieved.
The use of Enhanced Alignment is recommended for challenging alignment processes with easily confused structures or restricted fields of view.
Multilayer wafer stacks are used in a number of structuring processes. By means of infrared (IR) illumination, the alignment marks that in the typical case are embedded between the layers can be identified and aligned.
Alignment can also be done using IR light based on such embedded marks. These require the use of materials that are transparent for IR light, such as undoped silicon, III-V semiconductors (e.g. GaAs) and adhesives for temporary bonding and debonding techniques. Specific cases should be tested to verify process feasibility.
In order to ensure availability of IR alignment to the greatest possible extent, the SUSS mask aligner can be optionally equipped with powerful IR light sources and high performance camera systems.
A mask with a certain structure is aligned with the wafer in very close proximity (thus “proximity” lithography). During exposure, the shadow cast by the mask structure is transferred to the wafer. The resulting exposure quality depends on both the precision with which the mask and wafer are spaced apart and the optical system used for exposure.
Being fast and suited to flexible implementation, this method is regarded as the most cost-effective technique for producing microstructures down to 3 µm in size. With contact exposure, resolutions in the sub-micron range can be achieved. Typical areas of use include wafer-level chip-scale packaging, flip chip packaging, bumping, MEMS, LED and power devices. The systems are deployed in high-volume production as well as in industrial research.
The mask aligners supplied by SUSS MicroTec are based on proximity lithography.
Features & Benefits
The lower the exposure gap from mask to wafer, the higher the resolution. In soft contact mode the wafer is brought into contact with the mask and is fixed onto the chuck with vacuum.
In hard contact mode the wafer is brought in direct contact with the mask, while positive nitrogen pressure is used to press the substrate against the mask. In hard contact mode a resolution in the 1 micron range is possible.
The large gap optics (LGO) optics is optimized for thick resist processes with large exposure gaps and 3D lithography, offering a resolution down to 5μm. The high resolution optics (HR) is apt for contact and close proximity lithography with structures down to 3μm at 20μm exposure gap. For processes with high dose requirements on 150mm wafers the exceptionally high intensity of the W150 HR optics facilitates high throughput.
The diffraction reducing exposure optics is designed to compensate diffraction effects in both contact and proximity lithography. Instead of using a plane wave as in other proximity lithography tools it provides an angular spectrum of planar light waves to reduce diffraction effects. The selection of a proper angular spectrum improves structure resolution in the resist.
MO Exposure Optics® is a unique illumination optics specifically designed for SUSS mask aligners. It is based on micro-lens plates instead of macroscopic lens assemblies. A simple plug & play changeover allows for a quick and easy changeover between different angular settings including the functionality of both classical SUSS HR and LGO illumination optics.
The telecentric illumination which is provided by the MO Exposure Optics improves light uniformity and leads to a larger process window. In consequence, this causes yield enhancements. MO Exposure Optics also decouples the exposure light from the lamp source thus small misalignments of the lamp do not affect the light uniformity. A decoupled light source saves setup and maintenance time and guarantees uniform illumination conditions during the full life-time of the lamp.
SUSS mask aligners are equipped with a WEC head system that allows reaching the parallelism between substrate and mask with a micrometric precision.
Auto Alignment is based on a motorized alignment stage. The COGNEX® based pattern recognition software automatically recognizes wafer target locations and controls the movement of the alignment stage. Coupled with SUSS MicroTec‘s DirectAlign® accuracies down to 0.25μm can be achieved. Auto Alignment enables highest repeatability of process results coupled with optimized throughput and minimum operator intervention.
Overlay accuracy regularly suffers considerable degradation due to the thermal run-out between photomask and the wafer. The SUSS MicroTec compensation system ThermAlign® ensures a constant temperature on the wafer chuck and additionally provides a stabilizing influence on the mask temperature. ThermAlign® compensates for run-out effects by adapting the temperature to the process conditions.
Implementation with Dark Field Masks
Large clearfield alignment is used in dark field mask applications. These contain very small clearfields, which means the targets on the wafer are difficult to localize. The large clearfield method allows the mask to be moved out of the visual field and so the target on the wafer is localized without being obscured by the mask itself.
Error rate reduction
For the alignment of specific challenging process requirements SUSS MicroTec offers the enhanced alignment function package which significantly reduces the error rate based on redundancy.
For situations where the alignment marks are damaged the system offers the option of defining replacement positions. Furthermore, it enables a two-stage final alignment process to be carried out which consists of an initial coarse alignment using guide marks followed by a fine alignment carried out using the same marks.
The use of enhanced alignment is recommended for complex processes with easily confused structures, such as with advanced packaging, for example, or with restricted fields of view, such as with dark-field masks.
Simulation of lithographic processes
A simulation of lithographic processes makes the selection of optimal settings for process parameters possible without long-winded trial and error sessions. The multi-functional simulation software of lithographic processes “Lab”, which SUSS MicroTec distributes together with the supplier, GenISys, first and foremost allows the operator better process control. It offers all the required simulation functionality for an integrated design and process development, as well as verification and optimization. At the same time it covers all the process steps from illumination shaping and mask layout optimization up to photo resist processing. Additionally, modern 3D simulation functions improve the model visualizations.
The combination of MO Exposure Optics and the for SUSS optics custom-developed optical models in Lab facilitates customer-specific design optimization of the exposure filter plates, which in turn leads to an improvement in pattern fidelity.
Customer Specific Illumination Shaping and Mask Layouts
Combining optimization of mask layouts and the light source (source mask optimization), a procedure from projection lithography, makes it possible to reduce pattern inaccuracies due to illumination errors, processing artifacts and diffraction. A combined selection to match the exposure filter plates with the mask patterns (OPC = optical proximity correction) to customer specific requirements allows considerable expansion of the lithographic process functionality.
A simulation platform permits modeling of process parameters such as mask patterns and illumination parameters. This facilitates the exposure and mask patterns to be set for specific production situations with a reduced experimental effort, and reduces illumination and process errors.
Source mask optimization, together with SUSS MicroTecs customizable MO Exposure Optics® form an important contribution to improvement of process stability in mask aligner lithography.
Handling Fragile and Bent Substrates
Handling wafers is the major challenge when automatizing production processes. In a production environment with high process change rates and therefore a large number of different substrates, for example in foundry production, the handling systems have to meet rapidly changing requirements. The reliability of the automatic handling has a direct effect on through-put and yield. SUSS mask aligners have a choice of flexibly interchangeable special tooling for handling the widest range of fragile, bent or warped substrates, and the tooling can be customized even further for particularly arduous production processes according to customer specifications.
Handling of Thinned Wafers
A special vacuum chuck supports ultra-thin wafers with thicknesses of less than 120 µm and down to 50 µm.
Handling of Warped Wafers
Bent and warped wafers are carefully pulled flat before alignment and exposure. Due to the variety of the parameters that affect it, an optimal tooling implementation requires adaptation for the specific substrate.
A special carrier system protects the wafer, especially suitable for the protection of double-sided structures as for MEMS applications.