ELP300 Gen2 Excimer Laser Stepper

SUSS MicroTec‘s 的 ELP300 平台(針對直徑 200 至 300mm 的晶圓) 使用準分子雷射步進技術(Excimer-Laser-Stepper)。透過其雷射剝蝕功能,也就是透過 248 / 308nm 準分子雷射及光罩完成的乾式蝕刻,此系統可達成更高的結構精準度和良率。這是為高產量需求設計,並適合用於先進封裝產業複雜的微結構製程。此外,雷射處理系統亦可進一步使用於晶圓級封裝,例如:薄晶圓處理的雷射剝離、重佈線製程(„Re-Distribution Layers“ = RDL)中的晶種層直接移除,以及光阻劑的曝光。

Highlights

解析度可達 1µm (孔via) 及 2.5µm (線寬traces)

對準精度 +/-1µm

可使用波長:248nm 或 308nm

投影光學鏡組: 最大可至直徑 100mm

結構製程模式:步進重複(Step & Repeat)、步進掃描(Step & Scan)、連續掃描(Continuous Scan)

高度自動化:SECS/GEM,、自動取放晶圓

SUSS MIcroTec Laser Processing ELP300 Gen2

SÜSS MicroTec‘s 的 ELP300 平台(針對直徑 200 至 300mm 的晶圓) 使用準分子雷射步進技術(Excimer-Laser-Stepper)。透過其雷射剝蝕功能,也就是透過 248 / 308nm 準分子雷射及光罩完成的乾式蝕刻,此系統可達成更高的結構精準度和良率。這是為高產量需求設計,並適合用於先進封裝產業複雜的微結構製程。此外,雷射處理系統亦可進一步使用於晶圓級封裝,例如:薄晶圓處理的雷射剝離、重佈線製程(„Re-Distribution Layers“ = RDL)中的晶種層直接移除,以及光阻劑的曝光。

New developments in solid state laser technology, such as high performance UV lasers with pulse rates in the picosecond range, have expanded the potential scope of laser applications to include microstructuring. Specifically, lasers are currently being deployed in 3D integration, where examples include manufacturing vias in interposers and in applications involving redistribution layers (WLCSP / WLFO).

When used in microstructuring applications, excimer lasers offer capabilities beyond traditional solid state lasers as well as common photolithography steppers. This involves using a pulsed laser beam to remove material from a surface. Specifically, electrons are excited through a photo-chemical reaction, resulting in a sudden increase in pressure and a kind of explosion that removes material in the form of monomers and gases. Since only a minimum amount of heat is produced, the process technology is highly suited for temperature-sensitive materials.

In excimer laser processing, masks are used as patterns, allowing a wide variety of complex structures to be created. Similar to the projection stepper in photolithography, an optical system between the mask and the wafer projects the mask image onto the wafer. The projected image working according to a step and repeat system, directly removes the material from the wafer surface and creates the structure.

Excimer lasers can also be used to debond wafers from glass carriers.

Highlights

  • High resolution to ~2.5µm

Available for:

Automated Excimer Laser Stepper

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Publications

Ultra-Small Via-Technology of Thinfilm Polymers Using Advanced Scanning Laser Ablation

Ultra-Small Via-Technology of Thinfilm Polymers Using Advanced Scanning Laser Ablation

Excimer Laser Ablation – A Novel Patterning Solution for Advanced Packaging

Excimer Laser Ablation – A Novel Patterning Solution for Advanced Packaging

Excimer Laser Via-Drilling - Options to Further Capabilities of Next Generation Wafer Level Processing Devices

Excimer Laser Via-Drilling - Options to Further Capabilities of Next Generation Wafer Level Processing Devices

Laser Ablation – Emerging Patterning Technology for Advanced Packaging

Laser Ablation – Emerging Patterning Technology for Advanced Packaging

New Excimer Laser-Based Dual Damascene Processes for High I/O Applications with Ultra-Fine Line Routing

New Excimer Laser-Based Dual Damascene Processes for High I/O Applications with Ultra-Fine Line Routing

Excimer Laser Ablation for Microvia and Fine RDL Routings for Advanced Packaging

Excimer Laser Ablation for Microvia and Fine RDL Routings for Advanced Packaging

Creating Planar Embedded RDL Structures Without CMP

Creating Planar Embedded RDL Structures Without CMP

Technical Publications
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