DSC300 Gen3 使用最先進的投影光刻技術，處理尺寸 300 毫米以內的晶圓。此設備可滿足晶圓級封裝、3D 整合應用以及晶圓凸塊處理的需求，並可說是新興的封裝應用(如：銅柱凸塊及晶圓級晶片尺寸封裝) 理想的解決方案。
這個超現代化光刻掃描技術呈現的即為高性能光學鏡頭、高對準精度和高度自動化技術。掃描方法已可達到極低的投影誤差（+ / - 3％）。
透過投影光刻儀 DSC300 Gen2，SUSS MicroTec 公司更進一步於歷來的步進投影技術外，提供一個光罩對準產品組合的補充方案，且同時兼顧成本效益（CoO）。
1:1-寬投影鏡面 (Wynn Dyson)
可使用晶圓 / 載具尺寸最大至 300mm x 300mm
間隔變數 (NA) 0,07 至 0,14
Projection exposure entails aligning the mask with the wafer. The mask pattern is subsequently projected onto the wafer by means of an optical system between the mask and the wafer. With this process, usually only a portion of the wafer is exposed. By repeating the process incrementally ("step and repeat") or through a continuous process ("scanning"), the wafer is completely exposed. The type and the characteristics of the projection optics are decisive factors for resolution and depth of focus and thus for the effectiveness of the exposure.
The projection scanner technology offered by SUSS MicroTec utilizes the combined advantages of full-field exposure and conventional projection lithography, and serves as an alternative to mask aligners and conventional projection steppers. Projection scanning involves aligning a full-field mask with the substrate and then projecting the mask pattern onto the substrate by means of scanning. Scanning technology achieves greater throughput than stepper processes, while at the same time reducing system costs and achieving resolutions down to 3 µm.
Projection scanning offers the greatest advantage in processes requiring high resolutions or where high topography and thick resist coatings are involved.
Features & Benefits
Superior Optics Design
The optical and mechanical design of the projection optics ensures a large depth of focus for applications both with thin and thick resist coatings and for substrates with varying topography. Optimized image focusing provides enhanced resolution and improved control of resist sidewall angles.
Excellent Alignment Precision
On-axis alignment mode utilizing through-the-lens alignment (TTL) of the mask to the wafer ensures alignment precision levels of less than 1 micron.
The off-axis mode allows processing of opaque masks without large clear areas to be aligned very precisely. The alignment is supported by state-of-the-art pattern recognition technology.
High Degree of Automation