The universal XBS200 platform allows for aligned wafer bonding of wafer sizes up to 200 mm. Its versatility and modular design offer maximum process flexibility in all permanent bonding tasks. A novel aligned wafer transfer method eliminates the complexity of traditional systems and offers consistent process results with excellent system availability. The XBS200 platform offers low cost of ownership for high-volume production of MEMS, LED and 3D devices.
Submicron alignment accuracy
High process repeatability
Low cost of ownership
The XBS200 handles single wafers as well as aligned- and bonded wafer pairs by making use of a novel aligned wafer transfer method. It offers wafer cassette stations with integrated mapping and a camera-based optical pre-aligner with optional ID readers. An optional camera system allows to monitor and record the inside of the machine. A cyclic scheduling algorithm with automated throughput optimization ensures consistent timing of all processes and continuous run capability.
The XBA bond aligner delivers consistent submicron alignment accuracy for transparent or non-transparent wafers by using our proprietary inter-substrate-alignment (ISA) technology. Built-in fixed reference, global calibration and overlay verification ensure optimum repeatability. Global calibration wafers are an integral part of the system and make automated calibration and overlay verification simple and quick.
The XBA offers the option as novel functionality to locally bond a wafer pair via laser pre-bonding after alignment and before transferring it into the bond chamber. This helps to literally freeze the achieved alignment accuracy of the bond aligner.
The XB200 bond chamber is the process module version of the stand-alone XB8 bonder. It offers a wide parameter window and is therefore ideal for any thermo-compression bonding processes. Bond force options include a 60 kN and a 100 kN version and a temperature range of up to 550 °C is available. Reproducible process results from wafer to wafer achieve a consistently high product quality.
Anodic wafer bonding involves encapsulating components on the wafer by means of ionic glass. In triple-stack bonding, three layers (i.e. glass-silicon-glass) are simultaneously bonded, enhancing both functionality and yield.
Eutectic wafer bonding takes advantage of the special properties of eutectic metals. Similar to soldering alloys, such metals melt already at low temperatures. This property allows planar surfaces to be achieved.
In order to control reflow of the eutectic material, eutectic bonding requires precise dosing of the bonding force and even temperature distribution.
Fusion bonding refers to spontaneous adhesion of two planar substrates. The process involves rinsing the polished discs and rendering them largely hydrophilic, then placing them in contact and tempering them at high temperatures. Plasma pretreatment allows the substrates to be bonded at room temperature.
Glass Frit Bonding
A glass frit bonding process involves screen-printing glass frits onto the bonding surfaces. This results in structures that are subsequently heated and fused when the two substrate surfaces are placed in contact. On cooling, a mechanically stable bond results.
Metal Diffusion Bonding
Metal diffusion bonding is based on Cu-Cu, Al-Al, Au-Au and other metallic bonds. In addition, the use of metal diffusion allows two wafers to be bonded both mechanically and electrically in a single step. The technique is required for bonding in 3D applications such as 3D stacking.
SLID bonding (solid-liquid inter-diffusion) is based on diffusion and the mixture of different metals. The melting temperature of the alloy after bonding is very much higher than the bonding temperature, which clearly widens the range of possible applications.