Be on alert for fraudulent orders!
The projection scanner DSC300 Gen 2 suitable for wafer sizes up to 300mm utilizes latest technologies of projection lithography. The system is designed to meet the requirements for wafer-level packaging, 3D packaging and bumping application and is ideal for emerging packaging applications such as CU pillar bumping and wafer-level chip-scale packaging. With its optical performance, alignment accuracy and high level of automation the system represents the latest projection scan technology. The scanning technique results in excellent image uniformity across the wafer (+/- 3%).
With the projection scanner DSC300 Gen2 SUSS MicroTec offers a complementary technology to its mask aligner portfolio and lowest cost of ownership alternative for traditional projection stepper lithography.
Broadband 1:1 projection lens (Wynn Dyson)
Wafer sizes up to 300mm
Selectable numerical aperture (NA) of 0.07 to 0.14
Alignment precision <1µm
Projection exposure entails aligning the mask with the wafer. The mask pattern is subsequently projected onto the wafer by means of an optical system between the mask and the wafer. With this process, usually only a portion of the wafer is exposed. By repeating the process incrementally ("step and repeat") or through a continuous process ("scanning"), the wafer is completely exposed. The type and the characteristics of the projection optics are decisive factors for resolution and depth of focus and thus for the effectiveness of the exposure.
The projection scanner technology offered by SUSS MicroTec utilizes the combined advantages of full-field exposure and conventional projection lithography, and serves as an alternative to mask aligners and conventional projection steppers. Projection scanning involves aligning a full-field mask with the substrate and then projecting the mask pattern onto the substrate by means of scanning. Scanning technology achieves greater throughput than stepper processes, while at the same time reducing system costs and achieving resolutions down to 3 µm.
Projection scanning offers the greatest advantage in processes requiring high resolutions or where high topography and thick resist coatings are involved.
Features & Benefits
Superior Optics Design
The optical and mechanical design of the projection optics ensures a large depth of focus for applications both with thin and thick resist coatings and for substrates with varying topography. Optimized image focusing provides enhanced resolution and improved control of resist sidewall angles.
Excellent Alignment Precision
On-axis alignment mode utilizing through-the-lens alignment (TTL) of the mask to the wafer ensures alignment precision levels of less than 1 micron. The off-axis mode allows processing of opaque masks without large clear areas to be aligned very precisely. The alignment is supported by state-of-the-art pattern recognition technology.
High Degree of Automation