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The DSC500 semi-automatic projection lithography platform by SUSS MicroTec supports substrate sizes of up to 450 mm x 500 mm.
Equipped with a full-field mask and broadband projection optics, the scanner exposes the wafer and the substrate in a single continuous mode (i.e. scanning). Additional functions can be integrated in designing the mask layout, for example exposure of substrate edges – an important requirement for subsequent process steps such as plating.
Broadband 1:1 projection lens (Wynn Dyson)
Wafer / substrate sizes up to 450 mm x 500 mm
Variable NA from 0.07 to 0.14
Resolution < 3 µm
Alignment precision < 1 µm
Manual or automatic material handling
Projection exposure entails aligning the mask with the wafer. The mask pattern is subsequently projected onto the wafer by means of an optical system between the mask and the wafer. With this process, usually only a portion of the wafer is exposed. By repeating the process incrementally ("step and repeat") or through a continuous process ("scanning"), the wafer is completely exposed. The type and the characteristics of the projection optics are decisive factors for resolution and depth of focus and thus for the effectiveness of the exposure.
The projection scanner technology offered by SUSS MicroTec utilizes the combined advantages of full-field exposure and conventional projection lithography, and serves as an alternative to mask aligners and conventional projection steppers. Projection scanning involves aligning a full-field mask with the substrate and then projecting the mask pattern onto the substrate by means of scanning. Scanning technology achieves greater throughput than stepper processes, while at the same time reducing system costs and achieving resolutions down to 3 µm.
Projection scanning offers the greatest advantage in processes requiring high resolutions or where high topography and thick resist coatings are involved.
Features & Benefits